inchange semiconductor isc product specification isc silicon pnp power transistor TIP514 description continuous collector current-i c = -5a collector-emitter breakdown voltage- : v (br)ceo = -150v(min.) collector power dissipation- : p c = 20w @t c 100 applications designed for power amplifier and high speed switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -150 v v ceo collector-emitter voltage -150 v v ebo emitter-base voltage -5 v i c collector current-continuous -5 a i cm collector current-peak -7.5 a i b b base current-continuous -2 a collector power dissipation @t a = 25 2 p c collector power dissipation @t c 100 20 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit /w r th j-c thermal resistance,junction to case 5.0 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor TIP514 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = -30ma; i b = 0 -150 v v ce (sat) -1 collector-emitter saturation voltage i c = -2.5a; i b = -0.25a b -1.0 v v ce (sat) -2 collector-emitter saturation voltage i c = -5a; i b = -0.5a b -2.0 v v be( on ) base-emitter on voltage i c = -5a; v ce = -4v -2.2 v i ceo collector cutoff current v ce = -75v; i b = 0 b -0.3 ma i ces collector cutoff current v ce = -150v; v be = 0 v ce = -75v; v be = 0, t c =150 -1.0 -2.0 ma i ebo emitter cutoff current v eb = -2.5v; i c = 0 v eb = -5v; i c = 0 -0.1 -1.0 ma h fe-1 dc current gain i c = -2.5a; v ce = -4v 30 150 h fe-2 dc current gain i c = -5a; v ce = -4v 15 isc website www.iscsemi.cn 2
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